Art

J-GLOBAL ID：200902290353021729   Reference number：06A0116343

Preparation of Single-Oriented (111)VN Film with Low-Resistivity and Its Application as Diffusion Barrier between Cu and Si

抵抗率の低い単一配向した(111)VN膜の作製とそのCuとSiの間の拡散バリヤとしての応用

Author (5)： YOSHIMOTO Ken-ichi (Asahikawa National Coll. of Technol., Hokkaido, JPN) ,  KAIYA Fumihiro (Asahikawa National Coll. of Technol., Hokkaido, JPN) ,  SHINKAI Satoko (Takuma National Coll. of Technol., Kagawa, JPN) ,  SASAKI Katsutaka (Kitami Inst. of Technol., Hokkaido, JPN) ,  YANAGISAWA Hideto (Kitami Inst. of Technol., Hokkaido, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 45  Issue： 1A  Page： 215-220  Publication year： Jan. 15, 2006 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *electrical resistivity ,...

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JST classification (1)： Thin films of other inorganic compounds  (BK14060A)

Terms in the title (7)： 抵抗率 ,  配向 ,  作製 ,  Cu ,  Si ,  拡散バリヤ ,  応用