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J-GLOBAL ID：200902290450659444
Reference number：05A0605964
Behavior of Metal-Induced Negative Oxide Charges on the Surface of N-type Silicon Wafers Using Frequency-Dependent AC Surface Photovoltage Measurements
周波数依存AC表面光起電力測定によるn型シリコンウエハ表面の金属誘起酸化物電荷の振舞い
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Author (3)：
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Material：
Volume：
44
Issue：
6A
Page：
3778-3783
Publication year：
Jun. 15, 2005
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Electronic structure of crystalline semiconductors
Reference (29)：
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MUNAKATA, C. Semicond. Sci. Technol. 1990, 5, 991
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SHIMIZU, H. Semicond. Sci. Technol. 1991, 6, 765
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SHIMIZU, H. Appl. Phys. Lett. 1993, 62, 276
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SHIMIZU, H. J. Electrochem. Soc. 1997, 144, 4336
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GATOS, H. C. J. Vac. Sci. Technol. 1973, 10, 130
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