RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

NANISHI Y; SAITO Y; YAMAGUCHI T

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J-GLOBAL ID：200902295162995067 Reference number：03A0407307

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

InNと関連合金のrf分子線エピタクシー成長とその特性

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Material：
Volume： 42 Issue： 5A Page： 2549-2559 Publication year： May. 15, 2003
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：文献レビュー Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films , Luminescence of semiconductors , Electronic structure of crystalline semiconductors

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