Art

J-GLOBAL ID：200902297657565444   Reference number：08A0938773

Graphene segregated on Ni surfaces and transferred to insulators

グラフェンのNi表面上偏析と絶縁体への転写

Author (6)： YU Qingkai (Center for Advanced Materials, Dep. of Electrical and Computer Engineering, Univ. of Houston, Houston, Texas 77204, USA) ,  LIAN Jie (Dep. of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Inst., Troy, New York 12180, USA) ,  SIRIPONGLERT Sujitra (Center for Advanced Materials, Dep. of Electrical and Computer Engineering, Univ. of Houston, Houston, Texas 77204, USA) ,  LI Hao (Dep. of Mechanical and Aerospace Engineering, Univ. of Missouri, Columbia, Missouri 65211, USA) ,  CHEN Yong P. (Dep. of Physics and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana 47907, USA) ,  PEI Shin-shem (Center for Advanced Materials, Dep. of Electrical and Computer Engineering, Univ. of Houston, Houston, Texas 77204, USA)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 93  Issue： 11  Page： 113103  Publication year： Sep. 15, 2008 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *Graphite ,  Nickel ,  surface ,  *segregation (concentration distribution) ,  insulating material ,  transcription ,  substrate (plate) ,  chemical synthesis ,  Carbon ,  cooling velocity ,  film thickness ,  quality ,  electron microscope ,  Raman spectroscopy ,  crystal structure ,  etching ,  *graphene ,  insulator

JST classification (2)： Carbon and its compounds  (YB02060D) ,  Other metallography  (WB01040Y)

Terms in the title (5)： グラフェン ,  Ni ,  偏析 ,  絶縁体 ,  転写