Pat
J-GLOBAL ID:200903078223625899
半導体装置およびその製造方法
Inventor:
,
,
Applicant, Patent owner:
Agent (1):
鈴江 武彦 (外6名)
Gazette classification:公開公報
Application number (International application number):1999359463
Publication number (International publication number):2001168092
Application date: Dec. 17, 1999
Publication date: Jun. 22, 2001
Summary:
【要約】【課題】シリコン酸化膜に対して十分な選択比が取れるシリコン窒化膜を形成すること。【解決手段】Si原料としてSi2 Cl6 を用いて、LPCVD法により塩素濃度が4×1020cm-3以上のシリコン窒化膜10を形成する。
Claim (excerpt):
塩素濃度が4×1020cm-3以上であるシリコン窒化膜を有することを特徴とする半導体装置。
IPC (6):
H01L 21/318
, H01L 21/768
, H01L 27/108
, H01L 21/8242
, H01L 29/78
, H01L 21/336
FI (6):
H01L 21/318 B
, H01L 21/90 K
, H01L 27/10 621 Z
, H01L 27/10 681 Z
, H01L 29/78 301 G
, H01L 29/78 301 Y
F-Term (91):
5F033HH04
, 5F033HH11
, 5F033HH19
, 5F033HH32
, 5F033HH33
, 5F033HH34
, 5F033JJ18
, 5F033JJ19
, 5F033JJ33
, 5F033KK01
, 5F033MM01
, 5F033MM02
, 5F033MM08
, 5F033MM12
, 5F033MM13
, 5F033NN03
, 5F033NN06
, 5F033NN07
, 5F033PP06
, 5F033PP07
, 5F033QQ08
, 5F033QQ13
, 5F033QQ19
, 5F033QQ25
, 5F033QQ28
, 5F033QQ31
, 5F033QQ37
, 5F033QQ48
, 5F033QQ49
, 5F033QQ58
, 5F033QQ62
, 5F033QQ74
, 5F033QQ76
, 5F033QQ89
, 5F033QQ92
, 5F033QQ94
, 5F033RR04
, 5F033RR06
, 5F033RR11
, 5F033RR12
, 5F033RR13
, 5F033RR14
, 5F033RR15
, 5F033RR20
, 5F033SS01
, 5F033SS02
, 5F033SS13
, 5F033TT06
, 5F033TT07
, 5F033TT08
, 5F033VV06
, 5F033VV16
, 5F033WW03
, 5F033WW04
, 5F033XX01
, 5F033XX24
, 5F040DC01
, 5F040EC02
, 5F040EC04
, 5F040EC07
, 5F040EC20
, 5F040ED03
, 5F040EF02
, 5F040EH07
, 5F040EK05
, 5F040EL02
, 5F040EL03
, 5F040EL04
, 5F040EL06
, 5F040FA02
, 5F040FA07
, 5F040FB02
, 5F040FB04
, 5F040FB05
, 5F058BA09
, 5F058BA20
, 5F058BC08
, 5F058BC10
, 5F058BF04
, 5F058BF24
, 5F058BF30
, 5F058BF37
, 5F058BJ02
, 5F083GA03
, 5F083GA27
, 5F083JA39
, 5F083JA40
, 5F083KA05
, 5F083MA02
, 5F083MA20
, 5F083PR21
Patent cited by the Patent:
Cited by examiner (2)
-
半導体装置の製造方法
Gazette classification:公開公報
Application number:特願平8-239158
Applicant:株式会社東芝
-
特開昭63-079974
Return to Previous Page