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J-GLOBAL ID：201001083637797737   Update date: Feb. 02, 2024

Shimizu Yasuo

シミズ ヤスオ | Shimizu Yasuo
Affiliation and department：
Sony Semiconductor Solutions Corporation

About Sony Semiconductor Solutions Corporation


Homepage URL  (1)： https://scholar.google.com/citations?user=fypcITMAAAAJ&hl=ja
Research field  (5)： Nanobioscience ,  Nanomaterials ,  Biomaterials ,  Biomedical engineering ,  Electric/electronic material engineering
Research keywords  (10)： 自己拡散 ,  Focused ion beam ,  Solar cells ,  Steel materials ,  Hydrogen ,  Isotopes ,  biomaterials ,  Defects ,  Positron annihilation ,  Atom probe tomography
Research theme for competitive and other funds  (16)：
  • 2020 - 2023 サブナノ分解能応力下その場観察法の開拓による新たな照射硬化機構の解明
  • 2018 - 2023 Development of single dopant circuit by deterministic doping and application to stochastic processing
  • 2018 - 2022 革新炉材料開発のための次世代ナノスケール解析法の開発と照射後実験研究の国際ハブの構築
  • 2020 - 2021 Three-dimensional atomic-scale control of co-doped elemental distributions towards high￾efficiency luminescent devices
  • 2018 - 2019 フレキシブル・超軽量SHJ太陽電池およびタンデム化の要素技術の開発
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Papers (114)：
  • Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa. Characterization of Ga-face/Ga-face and N-face/N-face interfaces with antiparallel polarizations fabricated by surface-activated bonding of freestanding GaN wafers. Japanese Journal of Applied Physics. 2023. 62. SN. SN1013-SN1013
  • Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang. Room-temperature bonding of GaN and diamond via a SiC layer. Functional Diamond. 2022. 2. 1. 142-150
  • Yutaka Ohno, Jianbo Liang, Hideto Yoshida, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa. Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding. Japanese Journal of Applied Physics. 2022. 61. {SF}. SF1006/1-SF1006/5
  • Jianbo Liang, Daiki Takatsuki, Masataka Higashiwaki, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa. Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high-power device applications. Japanese Journal of Applied Physics. 2022. 61. SF. SF1001/1-SF1001/7
  • Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, Naoteru Shigekawa. AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process. Applied Physics Express. 2022. 15. 4. 041003/1-041003/5
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MISC (17)：
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Patents (2)：
  • 半導体装置およびその製造方法
  • イオン照射効果評価方法,プロセスシミュレータ及びデバイスシミュレータ
Books (1)：
  • 試料分析講座 半導体・電子材料分析(日本分析化学会編)
    丸善出版 2013 ISBN:9784621087008
Lectures and oral presentations  (307)：
  • Hydrogen detection in high-performance Si solar cells by atom probe tomography
    (14th International Symposium on Atomic Level Characterizations for New Materials and Devices’22 (ALC’22) 2022)
  • Fabrication of high-thermal-stability GaN/diamond junctions via intermediate layers
    (Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration (WaferBond'22) 2022)
  • 3次元アトムプローブによるフェライト鋼中のナノ析出物における水素トラップの可視化と水素トラップ能に及ぼす析出物サイズの影響
    (日本金属学会2022年秋期(第171回)講演大会 2022)
  • 表面活性化接合法によるGaN/GaN接合界面の評価
    (第83回応用物理学会秋季学術講演会 2022)
  • Electrical properties in wafer-bonding-based GaAs/GaN junctions on free-standing substrates
    (14th Topical Workshop on Heterostructure Microelectronics (TWHM2022) 2022)
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Education (2)：
  • 2004 - 2009 Keio University 大学院理工学研究科 School of Fundamental Science and Technology
  • 2000 - 2004 Keio University Faculty of Science and Technology Department of Applied Physics and Physico-Informatics
Professional career (1)：
  • Ph.D. in Engineering (Keio University)
Work history (7)：
  • 2021/12 - 現在 Sony Semiconductor Solutions Corporation
  • 2020/05 - 2021/11 National Institute for Materials Science
  • 2020/04 - 2020/04 Tohoku University Institute for Materials Research Academic Researcher
  • 2010/04 - 2020/03 Tohoku University Institute for Materials Research, Irradiation Effects in Nuclear and Their Related Materials Assistant Professor
  • 2008/04 - 2010/03 Japan Society for the Promotion of Science
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Committee career (6)：
  • 2023/04 - 現在 システムデバイスロードマップ (計測WG)
  • 2017/05 - 2021/11 SIMS国際シンポジウム(SISS) 幹事会委員、SISS-20実行委員長
  • 2017/04 - 2021/11 システムデバイスロードマップ (計測WG)
  • 2018/10 - 2019/10 22nd International Conference on Secondary Ion Mass Spectrometry Program Committee
  • 2016/06 - 2017/07 29th International Conference on Defects in Semiconductors Local Program Sub-Committee (Materials Characterization)
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Awards (10)：
  • 2024/03 - 応用物理学会 第45回応用物理学会優秀論文賞 Insight into segregation sites for oxygen impurities at grain boundaries in silicon
  • 2021/10 - 7th International Workshop on Low Temperature Bonding for 3D Integration Best Short Presentation Award Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device
  • 2021/10 - 7th International Workshop on Low Temperature Bonding for 3D Integration Best Presentation Award Fabrication of Ga<SUB>2</SUB>O<SUB>3</SUB>/Si direct bonding interface for high power device applications
  • 2017/04/01 - Japan Society of Applied Physics JSAP Poster Award Atom probe tomographic study on implanted deuterium in Al<SUB>2</SUB>O<SUB>3</SUB>/Hf<SUB>x</SUB>Si<SUB>1-x</SUB>O<SUB>2</SUB>/SiO<SUB>2</SUB> Stacks
  • 2016/06 - International Field Emission Society APT&M2016 Best Poster Award Atom probe tomographic study of human tooth materials
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Association Membership(s) (1)：
Japan Society of Applied Physics
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