A new field-effect transistor with selectively doped GaAs/n-Al<sub>x</sub>Ga<sub>1-x</sub>As heterojunctions.

MIMURA T; HIYAMIZU S; FUJII T; NANBU K

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J-GLOBAL ID：201002033203910051 Reference number：80A0299283

A new field-effect transistor with selectively doped GaAs/n-Al_xGa_1-xAs heterojunctions.

選択ドープしたGaAs/n-Al_xGa_1-xAsヘテロ接合を持つ新しい電界効果トランジスタ

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Author (4)： , , ,
Material：
Volume： 19 Issue： 5 Page： L225-L227 Publication year： 1980
JST Material Number： G0520A ISSN： 0021-4922 CODEN： JJAPA Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Reference (3)：

1) R. Dingle, H. L. Störmer, A. C. Gossard and W. Wiegmann: Appl. Phys. Lett. 33 (1978) 655.
2) H. Kröemer and W. Y. Chien: IEEE Trans. Electron Devices ED-26 (1979) 1839.
3) H. L. Störmer, R. Dingle, A. C. Gossard, W. Wiegmann and M. D. Sturge: Solid State Commun. 29 (1979) 705.

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A new field-effect transistor with selectively doped GaAs/n-AlxGa1-xAs heterojunctions.

A new field-effect transistor with selectively doped GaAs/n-Al_xGa_1-xAs heterojunctions.