Ferroelectric field-effect memory device using Bi4Ti3O12 film.

SUGIBUCHI K; KUROGI Y; ENDO N

Art

J-GLOBAL ID：201002065930704307 Reference number：75A0322598

Ferroelectric field-effect memory device using Bi₄Ti₃O₁₂ film.

Bi₄Ti₃O₁₂膜を用いた強誘電電界効果メモリデバイス

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Author (3)： , ,
Material：
Volume： 46 Issue： 7 Page： 2877-2881 Publication year： 1975
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIA Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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