Art

J-GLOBAL ID：201002221015195826   Reference number：10A0135430

Low temperature formation of β-FeSi₂ polycrystalline microstructure by pulsed laser deposition and thermal annealing

パルスレーザ堆積法と熱アニールによるβ-FeSi₂多結晶微細構造の低温形成

Author (9)： SUGAWARA Hiroharu (Dep. of Electronic Systems Engineering, Tokyo Metropolitan Inst. of Technol.) ,  NAKAMURA Shingo (Dep. of Electronic Systems Engineering, Tokyo Metropolitan Inst. of Technol.) ,  OOUCHI Masayuki (Dep. of Electronic Systems Engineering, Tokyo Metropolitan Inst. of Technol.) ,  KUMURA Yui (Dep. of Electronic Systems Engineering, Tokyo Metropolitan Inst. of Technol.) ,  SHISHIDO Takenobu (Dep. of Electronic Systems Engineering, Tokyo Metropolitan Inst. of Technol.) ,  IGARASHI Takatoshi (Dep. of Electronic Engineering, School of Engineering, The Univ. of Tokyo) ,  KISHI Masato (Dep. of Electronic Engineering, School of Engineering, The Univ. of Tokyo) ,  TSUCHIYA Masahiro (Dep. of Electronic Engineering, School of Engineering, The Univ. of Tokyo) ,  TSUCHIYA Masahiro (National Inst. of Information and Communications Technol.)
Material： IEICE Electronics Express (Web)  (IEICE Electron Express (Web))
Volume： 1  Issue： 9  Page： 253-257 (J-STAGE)  Publication year： 2004 
JST Material Number： U0039A  ISSN： 1349-2543  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *silicide ,  iron compound ,  semiconductor material ,  compound semiconductor ,  polycrystal ,  *micro structure ,  laser deposition ,  heat treatment ,  beta phase ,  *thin film growth ,  thermal annealing

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Materials of solid-state devices  (NC03020K)

Reference (8)：

• [1] D. Leong, M. A. Harry, K. J. Reeson, and K. P. Homewood, “On the origin of 1.5µm luminescence in ion beam synthesis β-FeSi₂, ” Appl. Phys. Lett., vol. 68, pp. 1649-1650, 1996.
• [2] T. Suemasu, Y. Iikura, K. Takakura, and F. Hasegawa, “Optimum annealing condition for 1.5µm photoluminescence from β-FeSi₂ balls grown by reactive deposition epitaxy and embedded in Si crystal, ” J. Lumin., vol. 87-89, pp. 528-531, May 2000.
• [3] M. Kishi, T. Igarashi, M. Tsuchiya, J. Katayose, M. Ouchi, and H. Sugawara, “Low temperature formation of beta-FeSi₂ droplets based on pulsed laser deposition, ” The 8th IUMRS Intern. Conf. on Advanced Materials, Yokohama, Japan, C7-12-15, p. 17, Oct. 2003.
• [4] T. Yoshitake, G. Shiraishi, and K. Nagayama, “Elimination of droplets using a vane velocity filter for pulsed laser ablation of FeSi₂, ” Appl. Surf. Sci., vol. 197-198, pp. 379-383, Sept. 2002.
• [5] L. C. Chen, “Particulate generated by pulsed laser ablation, ” in <i>Laser Deposition of Thin Films</i>, eds. D. B. Chrisey and G. K. Hubler, John Wiley & Sons, 1994, pp. 167-198.

Terms in the title (5)： パルスレーザ堆積 ,  熱アニール ,  多結晶 ,  微細構造 ,  低温形成