Art

J-GLOBAL ID：201002242072498425   Reference number：10A0467465

Characterization of flatband voltage roll-off and roll-up behavior in La₂O₃/silicate gate dielectric

La₂O₃/ケイ酸塩ゲート誘電体内での平坦バンド電圧ロールオフおよびロールアップ挙動のキャラクタリゼーション

Author (9)： KAKUSHIMA K. (Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku ...) ,  KOYANAGI T. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  TACHI K. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  SONG J. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  AHMET P. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  TSUTSUI K. (Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku ...) ,  SUGII N. (Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku ...) ,  HATTORI T. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  IWAI H. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
Material： Solid-State Electronics  (Solid-State Electron)
Volume： 54  Issue： 7  Page： 720-723  Publication year： Jul. 2010 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： characterization ,  wafer ,  *dielectrics ,  lanthanum oxide ,  signal characteristic ,  X-ray photoelectron spectroscopy ,  electric charge ,  active oxygen ,  fixed charge ,  *high-k dielectrics
Semi thesaurus term： roll-off characteristic

JST classification (1)： Materials of solid-state devices  (NC03020K)

Terms in the title (8)： La2O3 ,  ケイ酸塩 ,  ゲート誘電体 ,  平坦 ,  バンド ,  ロールオフ ,  挙動 ,  キャラクタリゼーション