Art

J-GLOBAL ID：201002242140253126   Reference number：10A0538024

Electrochemical etching process to tune the diameter of arrayed deep pores by controlling carrier collection at a semiconductor-electrolyte interface

半導体-電解質界面でのキャリア収集の制御による配列した深い孔の直径の調整のための電気化学的エッチング過程

Author (5)： SATO Hirotaka (Dep. of Applied Chemistry, School of Sci. and Engineering, Waseda Univ., Okubo, Shinjuku-ku, Tokyo 169-8555, JPN) ,  YAMAGUCHI Takuya (Dep. of Applied Chemistry, School of Sci. and Engineering, Waseda Univ., Okubo, Shinjuku-ku, Tokyo 169-8555, JPN) ,  ISOBE Tetsuhiko (Dep. of Applied Chemistry, School of Sci. and Engineering, Waseda Univ., Okubo, Shinjuku-ku, Tokyo 169-8555, JPN) ,  SHOJI Shuichi (Dep. of Electrical Engineering and Bioscience, School of Sci. and Engineering, Waseda Univ., Okubo, Shinjuku-ku ...) ,  HOMMA Takayuki (Dep. of Applied Chemistry, School of Sci. and Engineering, Waseda Univ., Okubo, Shinjuku-ku, Tokyo 169-8555, JPN)
Material： Electrochemistry Communications  (Electrochem Commun)
Volume： 12  Issue： 6  Page： 765-768  Publication year： Jun. 2010 
JST Material Number： W1133A  ISSN： 1388-2481  Document type： Article
Article type： 短報  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,  *wafer ,  *semiconductor ,  *electrolyte ,  interface(surface) ,  *collection ,  control ,  sequence and arrangement ,  hole ,  *pore diameter ,  adjustment ,  *electrolytic etching ,  positive hole ,  depth ,  Schottky barrier ,  overvoltage ,  electrical resistivity ,  *porous silicon ,  surface ,  electron microscopy
Semi thesaurus term： *carrier collection ,  domain ,  mask-less lithography ,  applied voltage ,  space charge layer ,  high aspect ratio ,  tip ,  infinitesimal cavity

JST classification (4)： Electrochemistry in general  (CB07010N) ,  Surface chemistry in general  (CB12010J) ,  Manufacturing technology of solid-state devices  (NC03030V) ,  Other contacts of semiconductors  (BM03086O)

Terms in the title (7)： 電解質 ,  界面 ,  キャリア収集 ,  直径 ,  電気化学 ,  エッチング ,  過程