Art

J-GLOBAL ID：201002244397719854   Reference number：10A0467464

Interface and electrical properties of La-silicate for direct contact of high-k with silicon

シリコンと直接接触の高k誘電体に関するケイ酸ランタンの界面および電気的性質

Author (12)： KAKUSHIMA K. (Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku ...) ,  TACHI K. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  ADACHI M. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  OKAMOTO K. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  SATO S. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  SONG J. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  KAWANAGO T. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  AHMET P. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  TSUTSUI K. (Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku ...) ,  SUGII N. (Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku ...) ,  HATTORI T. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN) ,  IWAI H. (Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
Material： Solid-State Electronics  (Solid-State Electron)
Volume： 54  Issue： 7  Page： 715-719  Publication year： Jul. 2010 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *dielectrics ,  *silicate ,  interface (surface) ,  electrical property ,  chemical bond ,  film thickness ,  state density ,  mobility (ratio) ,  Coulomb scattering ,  threshold ,  X-ray photoelectron spectroscopy ,  lanthanum oxide ,  subthreshold ,  *high-k dielectrics ,  equivalent oxide thickness
Semi thesaurus term： *Laケイ酸塩

JST classification (1)： Materials of solid-state devices  (NC03020K)

Terms in the title (6)： シリコン ,  直接接触 ,  高k誘電体 ,  ケイ酸ランタン ,  界面 ,  電気的性質