Art

J-GLOBAL ID：201002264420767641   Reference number：10A0047527

Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

ドーピングとグレーディング傾斜がGaAs基板上の変形InGaAsバッファーの表面と構造に与える効果

Author (5)： SONG Yuxin (Dep. of Microtechnology and Nanoscience, Photonics Lab., Chalmers Univ. of Technol., 41296 Goeteborg, SWE) ,  WANG Shumin (Dep. of Microtechnology and Nanoscience, Photonics Lab., Chalmers Univ. of Technol., 41296 Goeteborg, SWE) ,  TANGRING Ivar (Dep. of Microtechnology and Nanoscience, Photonics Lab., Chalmers Univ. of Technol., 41296 Goeteborg, SWE) ,  LAI Zonghe (Dep. of Microtechnology and Nanoscience, Photonics Lab., Chalmers Univ. of Technol., 41296 Goeteborg, SWE) ,  SADEGHI Mahdad (Dep. of Microtechnology and Nanoscience, Photonics Lab., Chalmers Univ. of Technol., 41296 Goeteborg, SWE)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 106  Issue： 12  Page： 123531  Publication year： Dec. 15, 2009 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *indium gallium arsenide ,  *doping ,  gallium arsenide ,  substrate(plate) ,  buffer layer ,  silicon ,  indium ,  beryllium ,  surface roughness ,  threading dislocation ,  *inclination ,  functional gradient material ,  optoelectronics ,  relaxation phenomenon ,  compound semiconductor ,  *surface structure
Semi thesaurus term： functionally graded material ,  surface morphology ,  strain relaxation

JST classification (2)： Surface structure of semiconductors  (BK15030A) ,  Lattice defects in semiconductors  (BK12040Q)

Terms in the title (5)： ドーピング ,  グレーディング ,  GaAs基板 ,  InGaAs ,  バッファー