Art

J-GLOBAL ID：201002280976710008   Reference number：10A1124761

Spin polarized electron transmission into GaAs quantum well across Fe₃O₄: Optical spin orientation analysis

Fe₃O₄を経由したGaAs量子井戸へのスピン偏極電子透過:スピン配向の光学解析

Author (6)： WADA E. (Materials and Structures Lab., Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JPN) ,  SHIRAHATA Y. (Materials and Structures Lab., Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JPN) ,  NAITO T. (Materials and Structures Lab., Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JPN) ,  ITOH M. (Materials and Structures Lab., Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JPN) ,  YAMAGUCHI M. (Graduate School of Engineering, Nagoya Univ., Furu-cho, Chikusa- ku, Nagoya 464-8603, JPN) ,  TANIYAMA T. (PRESTO, Japan Sci. and Technol. Agency, 3-5 Sanbancho, Chiyoda- ku, Tokyo 102-0075, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 97  Issue： 17  Page： 172509  Publication year： Oct. 25, 2010 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： spin polarization ,  transportation ,  *electrotransport ,  gallium arsenide ,  compound semiconductor ,  *quantum well ,  *ferromagnet ,  iron compound ,  oxide ,  magnetite ,  insulating material ,  epitaxy ,  thin film ,  electroluminescence ,  exciton ,  photoconductivity ,  interface (surface) ,  photocurrent ,  voltage ,  dependence ,  measurement ,  ellipsometry ,  injection (pour) ,  efficiency ,  filter ,  effect ,  electron ,  insulator ,  *electron transport
Semi thesaurus term： epitaxial growth ,  spin filter ,  spin injection ,  spin polarization ,  bias voltage ,  high efficiency ,  ellipsometry

JST classification (1)： Electric conduction in semiconductors and insulators in general  (BM03041P)

Terms in the title (7)： GaAs ,  量子井戸 ,  スピン偏極 ,  電子 ,  透過 ,  スピン配向 ,  光学解析