Art

J-GLOBAL ID：201002296626322068   Reference number：10A0904521

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

InSbメルトへのGaSbの溶解過程のX線侵入法によるその場観察

Author (10)： RAJESH G. (Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN) ,  ARIVANANDHAN M. (Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN) ,  MORII H. (Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN) ,  AOKI T. (Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN) ,  KOYAMA T. (Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN) ,  MOMOSE Y. (Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN) ,  TANAKA A. (Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN) ,  OZAWA T. (Dep. of Electrical Engineering, Shizuoka Inst. of Sci. and Technol., Fukuroi, Shizuoka 437-8555, JPN) ,  INATOMI Y. (Inst. of Space and Astronautical Sci., Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa ...) ,  HAYAKAWA Y. (Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 312  Issue： 19  Page： 2677-2682  Publication year： Sep. 15, 2010 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *indium antimonide ,  compound semiconductor ,  *melt ,  *gallium antimonide ,  *dissolution ,  *solution growth ,  antimonide ,  indium compound ,  gallium compound ,  in situ observation ,  measurement by X-ray system ,  *X-ray image ,  depth profile ,  thin film growth
Semi thesaurus term： gallium-indium antimonide

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (8)： InSb ,  メルト ,  GaSb ,  溶解 ,  過程 ,  X線 ,  侵入 ,  その場観察