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J-GLOBAL ID:201102200606714709   Reference number:11A1814507

Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy

分子ビームエピタクシーにより成長させた低歪,高Sn組成Ge1-xSnx合金の光ルミネセンス増強
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Volume: 99  Issue: 18  Page: 181125  Publication year: Oct. 31, 2011 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Luminescence of semiconductors 

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