Art

J-GLOBAL ID：201102213743407605   Reference number：11A1498998

Effect of Vacancy Distribution on the Thermal Conductivity of Ga₂Te₃ and Ga₂Se₃

Ga₂Te₃およびGa₂Se₃の熱伝導度に及ぼす空孔分布の影響

Author (6)： KIM Chang-Eun (Osaka Univ., Graduate School of Engineering, 565-0871, Suita, Osaka, JPN) ,  KUROSAKI Ken (Osaka Univ., Graduate School of Engineering, 565-0871, Suita, Osaka, JPN) ,  ISHIMARU Manabu (Osaka Univ., Inst. of Scientific and Industrial Res., 567-0047, Ibaraki, Osaka, JPN) ,  MUTA Hiroaki (Osaka Univ., Graduate School of Engineering, 565-0871, Suita, Osaka, JPN) ,  YAMANAKA Shinsuke (Osaka Univ., Graduate School of Engineering, 565-0871, Suita, Osaka, JPN) ,  YAMANAKA Shinsuke (Univ. of Fukui, Res. Inst. of Nuclear Engineering, 910-8507, Fukui, JPN)
Material： Journal of Electronic Materials  (J Electron Mater)
Volume： 40  Issue： 5  Page： 999-1004  Publication year： May. 2011 
JST Material Number： D0277B  ISSN： 0361-5235  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： gallium compound ,  telluride(chalcogenide) ,  selenide(chalcogenide) ,  *thermal conductivity ,  *vacancy ,  nanostructure ,  thermoelectric material ,  zincblende type crystal ,  incommensurability ,  scattering ,  lattice defect ,  heat treatment condition ,  transmission electron microscope ,  measurement ,  thermal diffusivity
Semi thesaurus term： *gallium selenide ,  *gallium telluride ,  phonon scattering ,  laser flash method ,  vacancy ,  zinc blende structure ,  thermal diffusivity ,  thermal conductivity ,  planar defect

JST classification (2)： Specific heat and thermal conduction in general  (BL05021E) ,  Lattice defects in semiconductors  (BK12040Q)

Terms in the title (3)： 熱伝導度 ,  空孔 ,  分布