Art

J-GLOBAL ID：201102226701036008   Reference number：11A0102088

Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

共鳴トンネルダイオードの室温における1THzを越える基本振動

Author (5)： SUZUKI Safumi (Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 2-12-1-S9-3 O-okayama, Meguro-ku ...) ,  ASADA Masahiro (Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 2-12-1-S9-3 O-okayama, Meguro-ku ...) ,  TERANISHI Atsushi (Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 2-12-1-S9-3 O-okayama, Meguro-ku ...) ,  SUGIYAMA Hiroki (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN) ,  YOKOYAMA Haruki (NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 97  Issue： 24  Page： 242102  Publication year： Dec. 13, 2010 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *resonant tunneling diode ,  electric oscillation ,  electromagnetic wave ,  room temperature ,  resonance tunnel effect ,  output ,  frequency(Hz) ,  voltage ,  voltage dependence ,  *indium gallium arsenide ,  *aluminum arsenide ,  compound semiconductor ,  depletion layer ,  current-voltage characteristic ,  *heterojunction ,  terahertz wave
Semi thesaurus term： bias voltage ,  oscillation frequency ,  二重障壁

JST classification (2)： Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y) ,  Diodes  (NC03050R)

Terms in the title (2)： 共鳴トンネルダイオード ,  室温