Art

J-GLOBAL ID：201102245294543352   Reference number：11A0637675

I-V measurement of NiO nanoregion during observation by transmission electron microscopy

透過型電子顕微鏡による観察の間におけるNiOナノ領域に関する電流電圧特性測定

Author (13)： FUJII Takashi (Graduate School of Information Sci. and Technol., Hokkaido Univ., Sapporo 060-0814, JPN) ,  ARITA Masashi (Graduate School of Information Sci. and Technol., Hokkaido Univ., Sapporo 060-0814, JPN) ,  HAMADA Kouichi (Graduate School of Information Sci. and Technol., Hokkaido Univ., Sapporo 060-0814, JPN) ,  KONDO Hirofumi (Graduate School of Information Sci. and Technol., Hokkaido Univ., Sapporo 060-0814, JPN) ,  KAJI Hiromichi (Graduate School of Information Sci. and Technol., Hokkaido Univ., Sapporo 060-0814, JPN) ,  TAKAHASHI Yasuo (Graduate School of Information Sci. and Technol., Hokkaido Univ., Sapporo 060-0814, JPN) ,  MONIWA Masahiro (Semiconductor Technol. Academic Res. Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama, 222-003, JPN) ,  FUJIWARA Ichiro (Semiconductor Technol. Academic Res. Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama, 222-003, JPN) ,  YAMAGUCHI Takeshi (Semiconductor Technol. Academic Res. Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama, 222-003, JPN) ,  AOKI Masaki (Semiconductor Technol. Academic Res. Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama, 222-003, JPN) ,  MAENO Yoshinori (Semiconductor Technol. Academic Res. Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama, 222-003, JPN) ,  KOBAYASHI Toshio (Semiconductor Technol. Academic Res. Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama, 222-003, JPN) ,  YOSHIMARU Masaki (Semiconductor Technol. Academic Res. Center, 3-17-2 Shinyokohama, Kohoku-ku, Yokohama, 222-003, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 109  Issue： 5  Page： 053702  Publication year： Mar. 01, 2011 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： RAM ,  *nickel oxide ,  magnetic thin film ,  *electrical conductivity ,  electron microscopy ,  transmission electron microscope ,  current-voltage characteristic ,  nanostructure ,  electrode ,  piezoelectric material ,  electric field effect ,  variation ,  heterogeneity ,  structural change ,  resistance random access memory
Semi thesaurus term： resistance random access memory

JST classification (2)： Oxide thin films  (BK14050P) ,  Electric conduction in other inorganic compounds  (BM03044O)

Terms in the title (4)： 透過型電子顕微鏡 ,  観察 ,  NiO ,  電流電圧特性