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J-GLOBAL ID:201102257889526247   Reference number:11A1923871

Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air

Cr水溶液で洗浄し空気に曝露したp型Si(001)ウエハにおける交流表面光起電力法により同定した非晶質酸化物電荷変化
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Material:
Volume: 50  Issue: 11,Issue 1  Page: 111301.1-111301.4  Publication year: Nov. 25, 2011 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

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Surface structure of semiconductors 
Reference (30):
  • 1) H. Shimizu: J. Electrochem. Soc. 144 (1997) 4335.
  • 2) R. K. Iler: The Chemistry of Silica (Wiley, New York, 1965)p.88.
  • 3) G. Eisenman: J. Biophys. 2 (1962) 259.
  • 4) H. Shimizu and C. Munakata: J. Appl. Phys. 73 (1993) 8336.
  • 5) H. Shimizu, R. Shin, and M. Ikeda: Jpn. J. Appl. Phys. 44 (2005) 3778.
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