Art

J-GLOBAL ID：201102259309488117   Reference number：11A0791602

Development of Novel Resist Materials for Micro-lithographic Patterning

微細加工用レジスト向け新素材・材料の開発

Author (5)： MORI HAJIME (和歌山県工技セ) ,  NOMURA EISAKU (和歌山県工技セ) ,  HOSODA ASAO (和歌山県 商工観光労働部) ,  MIYAKE YASUHITO (和歌山県工技セ) ,  TANIGUCHI HISAJI (和歌山県工技セ)
Material： 有機合成化学協会誌  (Journal of Synthetic Organic Chemistry, Japan)
Volume： 69  Issue： 4  Page： 403-412  Publication year： Apr. 01, 2011 
JST Material Number： F0383A  ISSN： 0037-9980  CODEN： YGKKAE  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： lithography ,  pattern formation ,  *chemically amplified resist ,  fine patterning ,  pollutant ,  gas ,  dendrimer ,  resist ,  *phenol ether ,  aromatic carboxylic acid ,  carboxylate(ester) ,  oxygen heterocyclic compound ,  phenolic compound
Semi thesaurus term： outgas ,  negative type resist ,  *furans ,  positive resist

JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Furans  (CF07072V)

Substance index (11)： 3,4-Dimethoxystyrene ,  2,2′-[[α-Methyl-4-[α,α-dimethyl-4-[(1,4-dihydro-1α,4α-epoxynaphthalene-2-yl)methoxy]benzyl]benzylidene]bis(p-phenyleneoxymethylene)]bis(1,4-dihydro-1α,4α-epoxynaphthalene) ,  2-Vinylphenol ,  4-Vinylguaiacol ,  5-Vinylguaiacol ,  3-Vinylphenol ,  4-Vinylcatechol ,  4-Vinylphenol ,  Bis(furan-2-carboxylic acid)5-[[4-[α,α-dimethyl-4-[1,1-bis[4-[3,5-bis(2-furoyloxy)benzyloxy]phenyl]ethyl]benzyl]phenoxy]methyl]-m-phenylene ester ,  1-[4-[α,α-Dimethyl-4-[3,5-bis(3-furanylmethoxy)benzoyloxy]benzyl]phenyl]-1,1-bis[4-[3,5-bis(3-furanylmethoxy)benzoyloxy]phenyl]ethane ,  Benzene-1,3,5-tricarboxylic acid 1,3-bis(3-furylmethyl)5-[4-[α,α-dimethyl-4-[1,1-bis[4-[3,5-bis(3-furylmethoxycarbonyl)benzoyloxy]phenyl]ethyl]benzyl]phenyl] ester

Reference (43)：

• 岡崎信次. はじめての半導体リソグラフィー技術
• ITO, H. Digest of Technical Papers of 1982, Symposium on VLSI Technology. 1982, 86
• SEKIGUCHI, A. J. Photopolym. Sci. Technol. 2003, 16, 1
• KIM, J. H. J. Photopolym. Sci. Technol. 2004, 17, 379
• ISHIKARA, S. Japanese Patent 21787. 1999

Terms in the title (4)： 微細加工 ,  レジスト ,  新素材 ,  開発