Art

J-GLOBAL ID：201102280748148356   Reference number：11A1668336

Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system

Si-Sc-C系における低温溶液成長による6H-SiC(0001)上への3C-SiCの形成過程

Author (7)： SEKI Kazuaki (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...) ,  ALEXANDER (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...) ,  KOZAWA Shigeta (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...) ,  UJIHARA Toru (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...) ,  CHAUDOUEET Patrick (Lab. des Materiaux et du Genie Physique, CNRS UMR5628-Grenoble INP, Minatec, 3 parvis Louis Neel, BP 257, 38016 ...) ,  CHAUSSENDE Didier (Lab. des Materiaux et du Genie Physique, CNRS UMR5628-Grenoble INP, Minatec, 3 parvis Louis Neel, BP 257, 38016 ...) ,  TAKEDA Yoshikazu (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 335  Issue： 1  Page： 94-99  Publication year： Nov. 15, 2011 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *solution growth ,  substrate (plate) ,  *silicon carbide ,  cubic system ,  hexagonal system ,  *heteroepitaxy ,  thin film growth ,  *polymorphic transition ,  *threading dislocation ,  compound semiconductor ,  semiconductor thin film ,  6H-silicon carbide ,  3C-silicon carbide
Semi thesaurus term： 低温溶液成長 ,  6H-SiC ,  3C-SiC ,  貫通らせん転位

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (3)： 低温 ,  溶液成長 ,  形成過程