Rchr
J-GLOBAL ID:201201088353400396
Update date: Sep. 27, 2022
Fukatsu Susumu
フカツ ススム | Fukatsu Susumu
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Affiliation and department:
The University of Tokyo
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Detailed information
Homepage URL (1):
http://kaken.nii.ac.jp/ja/r/60199164
Research field (7):
Crystal engineering
, Applied materials
, Electric/electronic material engineering
, Optical engineering and photonics
, General surgery, pediatric surgery
, Biomaterials
, Biomedical engineering
Research keywords (30):
Si
, SiGe
, 高配向性
, ヘテロ構造
, ナローギャップSiGe混晶量子井戸
, 間接遷移型半導体
, 遠赤外光発生
, 結晶欠陥
, 発光寿命短縮
, 室温可視光発光
, シリコンの発光機構
, ダイナミックな励起子局在
, 誘導放出光発生
, フォノン介在遷移抑制
, 電流注入モード
, 仮想遷移
, 過渡応答
, 不均一幅
, 高移動度トランジスタ(HEMT)
, 0次元閉じ込め
, 光伝導
, SiO_2-波長共振器
, 直接遷移化
, 2準位系
, 高起電力化
, 光共振器
, SiGeOI基板分離構造
, 遠赤外光
, エピ性Si
, 量子検出器
MISC (17):
FUKATSU Susumu. Photonic Non-Allied Heterostructure Devices Epitaxially Grown on Si. The Review of laser engineering. 2007. 35. 9. 577-585
Fukatsu S. 03aB09 GaSb-Si quantum dot-Will this new class of QD promise a viable Si-based active photonic device?(NCCG-36). Journal of the Japanese Association of Crystal Growth. 2006. 33. 4. 322-323
Fukatsu Susumu. CS-3-7 A Si-based active photonic/optoelectronic device. Proceedings of the Society Conference of IEICE. 2006. 2006. 1. "S-41"-"S-42"
S. FUKATSU, Masafumi JO, Nozomu YASUHARA, Kazuto ISHIDA, Kiyoshi KAWAMOTO. Semiconductor Superheterointerface. Hyomen Kagaku. 2004. 25. 12. 768-772
Sunamura H, Usami N, Shiraki Y, Fukatsu S. 28a-SS-20 PL spectra of annealed Si/pure-Ge/Si quantum wells. 応用物理学関係連合講演会講演予稿集. 1997. 44. 1
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Work history (1):
2011 - 東京大学 大学院・総合文化研究科 教授
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