Art

J-GLOBAL ID：201202222105334044   Reference number：12A0758732

Investigation of grain boundaries in BaSi₂ epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

透過型電子顕微鏡法と電子線励起電流法を用いたSi(111)板上のBaSi₂エピタキシャル膜における結晶粒界の研究

Author (12)： BABA Masakazu (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, JPN) ,  TOH Katsuaki (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, JPN) ,  TOKO Kaoru (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, JPN) ,  SAITO Noriyuki (Electron Microscope Facility, IBEC Innovation Platform, AIST, 16-1 Onogawa, Tsukuba 305-8569, JPN) ,  YOSHIZAWA Noriko (Electron Microscope Facility, IBEC Innovation Platform, AIST, 16-1 Onogawa, Tsukuba 305-8569, JPN) ,  JIPTNER Karolin (Advanced Electronic Materials Center, National Inst. for Materials Sci., Tsukuba, Ibaraki 305-0044, JPN) ,  SEKIGUCHI Takashi (Advanced Electronic Materials Center, National Inst. for Materials Sci., Tsukuba, Ibaraki 305-0044, JPN) ,  HARA Kosuke O. (Inst. for Materials Res., Tohoku Univ., Sendai 980-8577, JPN) ,  USAMI Noritaka (Inst. for Materials Res., Tohoku Univ., Sendai 980-8577, JPN) ,  USAMI Noritaka (Japan Sci. and Technol. Agency, CREST, Chiyoda-ku, Tokyo 102-0075, JPN) ,  SUEMASU Takashi (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, JPN) ,  SUEMASU Takashi (Japan Sci. and Technol. Agency, CREST, Chiyoda-ku, Tokyo 102-0075, JPN)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 348  Issue： 1  Page： 75-79  Publication year： Jun. 01, 2012 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： transmission electron microscope ,  *silicide ,  *barium compound ,  compound semiconductor ,  semiconductor thin film ,  *MBE growth ,  X-Ray Diffraction ,  RHEED ,  *crystallinity ,  *grain boundary ,  minority carrier ,  *carrier mobility
Semi thesaurus term： 電子線励起電流法 ,  reflection high energy electron diffraction

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (6)： 透過型電子顕微鏡法 ,  電子線励起 ,  Si ,  エピタキシャル膜 ,  結晶粒界 ,  研究