Art

J-GLOBAL ID：201202226442036590   Reference number：12A0524622

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

MOVPEによるc面サファイア基板上のInGaN系LEDsからの740nm発光

Author (5)： OHKAWA Kazuhiro (Dep. of Applied Physics, Fac. of Sci., Tokyo Univ. of Sci., 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, JPN) ,  WATANABE Tomomasa (Dep. of Applied Physics, Fac. of Sci., Tokyo Univ. of Sci., 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, JPN) ,  SAKAMOTO Masanori (Dep. of Applied Physics, Fac. of Sci., Tokyo Univ. of Sci., 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, JPN) ,  HIRAKO Akira (Dep. of Applied Physics, Fac. of Sci., Tokyo Univ. of Sci., 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, JPN) ,  DEURA Momoko (Dep. of Applied Physics, Fac. of Sci., Tokyo Univ. of Sci., 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, JPN)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 343  Issue： 1  Page： 13-16  Publication year： Mar. 15, 2012 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *MOCVD ,  substrate(plate) ,  sapphire ,  indium compound ,  *gallium compound ,  nitride ,  compound semiconductor ,  semiconductor thin film ,  *light emitting diode ,  electroluminescence ,  red light
Semi thesaurus term： *gallium indium nitride

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Light emitting devices  (NC03082G)

Terms in the title (3)： MOVPE ,  サファイア基板 ,  InGaN