Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length

SATO Michihiro; OHASHI Tetsuya; AIKAWA Keisuke; MARUIZUMI Takuya; KITAGAWA Isao

Art

J-GLOBAL ID：201202268593920208 Reference number：12A0295144

Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length

減少したゲート長のULSIセルにおける転位蓄積のシミュレーション

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Material：
Volume： 654/656 Issue： Pt.2 Page： 1682-1685 Publication year： 2010
JST Material Number： D0716B ISSN： 0255-5476 Document type： Article
Country of issue： Switzerland (CHE) Language： ENGLISH (EN)

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