Art

J-GLOBAL ID：201202283384858251   Reference number：12A0249984

Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

電子ドープマンガナイトの歪媒介相制御および電解質ゲート動作

Author (16)： XIANG Ping-Hua (National Inst. of Advanced Industrial, Sci. and Technol. (AIST), Tsukuba, JPN) ,  XIANG Ping-Hua (JST-CREST, Kawaguchi, JPN) ,  ASANUMA Shutaro (National Inst. of Advanced Industrial, Sci. and Technol. (AIST), Tsukuba, JPN) ,  ASANUMA Shutaro (JST-CREST, Kawaguchi, JPN) ,  YAMADA Hiroyuki (National Inst. of Advanced Industrial, Sci. and Technol. (AIST), Tsukuba, JPN) ,  INOUE Isao H. (National Inst. of Advanced Industrial, Sci. and Technol. (AIST), Tsukuba, JPN) ,  SATO Hiroshi (National Inst. of Advanced Industrial, Sci. and Technol. (AIST), Tsukuba, JPN) ,  AKOH Hiroshi (National Inst. of Advanced Industrial, Sci. and Technol. (AIST), Tsukuba, JPN) ,  AKOH Hiroshi (JST-CREST, Kawaguchi, JPN) ,  SAWA Akihito (National Inst. of Advanced Industrial, Sci. and Technol. (AIST), Tsukuba, JPN) ,  UENO Kazunori (Univ. Tokyo, Tokyo, JPN) ,  UENO Kazunori (JST-PRESTO, Kawaguchi, JPN) ,  YUAN Hongtao (RIKEN, Wako, JPN) ,  SHIMOTANI Hidekazu (RIKEN, Wako, JPN) ,  KAWASAKI Masashi (RIKEN, Wako, JPN) ,  IWASA Yoshihiro (RIKEN, Wako, JPN)
Material： Advanced Materials  (Adv Mater (Deerfield, Fla.))
Volume： 23  Issue： 48  Page： 5822-5827  Publication year： Dec. 22, 2011 
JST Material Number： W0001A  ISSN： 0935-9648  CODEN： ADVMEW  Document type： Article
Article type： 短報  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Thesaurus term： calcium compound ,  manganese compound ,  oxide ,  cerium compound ,  doping ,  *perovskite type crystal ,  ionic liquid ,  *epitaxy ,  *lattice distortion ,  transistor
Semi thesaurus term： *epitaxial growth ,  electric double layer transistor

JST classification (3)： Solid-solid interface  (CB12060M) ,  Bases,metal oxides  (CD01030Z) ,  Transistors  (NC03070N)

Terms in the title (4)： 電子 ,  歪 ,  電解質 ,  ゲート