Art

J-GLOBAL ID：201302202968500690   Reference number：13A0953839

Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

応力/転位加工中間層を使って改善されたSi(111)基板上に成長したGaNを用いたLED

Author (5)： MA Jun (Photonics Technol. Center, Dep. of Electronic and Computer Engineering, Hong Kong Univ. of Sci. and Technol., Clear ...) ,  ZHU Xueliang (Photonics Technol. Center, Dep. of Electronic and Computer Engineering, Hong Kong Univ. of Sci. and Technol., Clear ...) ,  WONG Ka Ming (Photonics Technol. Center, Dep. of Electronic and Computer Engineering, Hong Kong Univ. of Sci. and Technol., Clear ...) ,  ZOU Xinbo (Photonics Technol. Center, Dep. of Electronic and Computer Engineering, Hong Kong Univ. of Sci. and Technol., Clear ...) ,  LAU Kei May (Photonics Technol. Center, Dep. of Electronic and Computer Engineering, Hong Kong Univ. of Sci. and Technol., Clear ...)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 370  Page： 265-268  Publication year： May. 01, 2013 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： stress (mechanics) ,  dislocation(crystal) ,  layer ,  wafer ,  *gallium nitride ,  *light emitting diode ,  residual stress ,  interlayer ,  Si wafer ,  lattice defect
Semi thesaurus term： silicon substrate

JST classification (1)： Light emitting devices  (NC03082G)

Terms in the title (7)： 応力 ,  転位 ,  中間層 ,  Si ,  成長 ,  GaN ,  LED