Art

J-GLOBAL ID：201302205057733450   Reference number：13A0923670

Anisotropy of the silicon valence band induced by strain with various orientations

種々の配向歪により誘起されたケイ素価電子帯の異方性

Author (4)： INAOKA Takeshi (Dep. of Physics and Earth Sciences, Fac. of Sci., Univ. of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 Japan) ,  KINJYO Yuki (Dep. of Physics and Earth Sciences, Fac. of Sci., Univ. of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 Japan) ,  YANAGISAWA Susumu (Dep. of Physics and Earth Sciences, Fac. of Sci., Univ. of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 Japan) ,  TOMORI Kazuya (Dep. of Physics and Earth Sciences, Fac. of Sci., Univ. of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 Japan)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 113  Issue： 18  Page： 183718-183718-13  Publication year： May. 14, 2013 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,  *valence band ,  *lattice distortion ,  normal stress ,  tension (force) ,  compression ,  effective mass ,  band dispersion ,  uniaxial strain ,  biaxial strain

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Electronic structure of crystalline semiconductors  (BM02060N)

Terms in the title (5)： 配向 ,  誘起 ,  ケイ素 ,  価電子帯 ,  異方性