Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes

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J-GLOBAL ID：201302205509524888 Reference number：13A1130855

InGaN/GaN多重量子井戸発光ダイオードの意図的に形成したV形ピットを用いた効率と電気的性質の向上

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Author (8)：

HAN Sang-heon

About HAN Sang-heon

(LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, KOR)