Art
J-GLOBAL ID:201302205793603881   Reference number:13A1220665

Current density enhancement nano-contact phase-change memory for low writing current

低い書込み電流を得る電流密度増大ナノ接触相変化メモリ
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Volume: 103  Issue:Page: 033116-033116-5  Publication year: Jul. 15, 2013 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor integrated circuit 
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