Art

J-GLOBAL ID：201302205793603881   Reference number：13A1220665

Current density enhancement nano-contact phase-change memory for low writing current

低い書込み電流を得る電流密度増大ナノ接触相変化メモリ

Author (8)： YIN You (Div. of Electronics and Informatics, Fac. of Sci. and Technol., Gunma Univ., 1-5-1 Tenjin, Kiryu, Gunma 376-8515, JPN) ,  HOSAKA Sumio (Div. of Electronics and Informatics, Fac. of Sci. and Technol., Gunma Univ., 1-5-1 Tenjin, Kiryu, Gunma 376-8515, JPN) ,  IK PARK Woon (Dep. of Materials Sci. and Engineering, Korea Advanced Inst. of Sci. and Technol., 291 Daehak-ro, Yuseong-gu ...) ,  SIK JUNG Yeon (Dep. of Materials Sci. and Engineering, Korea Advanced Inst. of Sci. and Technol., 291 Daehak-ro, Yuseong-gu ...) ,  JAE LEE Keon (Dep. of Materials Sci. and Engineering, Korea Advanced Inst. of Sci. and Technol., 291 Daehak-ro, Yuseong-gu ...) ,  KUK YOU Byoung (Dep. of Materials Sci. and Engineering, Korea Advanced Inst. of Sci. and Technol., 291 Daehak-ro, Yuseong-gu ...) ,  LIU Yang (State Key Lab. of Electronic Thin Films and Integrated Cells, Univ. of Electronic Sci. and Technol. of China ...) ,  YU Qi (State Key Lab. of Electronic Thin Films and Integrated Cells, Univ. of Electronic Sci. and Technol. of China ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 103  Issue： 3  Page： 033116-033116-5  Publication year： Jul. 15, 2013 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： nonvolatile memory ,  point contact ,  finite element method ,  *data writing ,  electric current ,  material ,  consumed electric power ,  *germanium compound ,  antimony compound ,  telluride (chalcogenide) ,  current density ,  *phase change random access memory ,  nano contact ,  *reset current ,  phase change material
Semi thesaurus term： *phase change memory

JST classification (1)： Semiconductor integrated circuit  (NC03162T)

Terms in the title (4)： 書込み電流 ,  電流密度 ,  ナノ接触 ,  相変化メモリ