Art

J-GLOBAL ID：201302224838354904   Reference number：13A0358874

Lattice and grain-boundary diffusions of boron atoms in BaSi₂ epitaxial films on Si(111)

Si(111)上のBaSi₂エピタキシャル膜におけるホウ素原子の格子拡散および粒界拡散

Author (9)： NAKAMURA K. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN) ,  BABA M. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN) ,  AJMAL KHAN M. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN) ,  DU W. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN) ,  SASASE M. (The Wakasa Wan Energy Res. Center, Tsuruga, Fukui 914-0192, JPN) ,  HARA K. O. (Inst. for Materials Res., Tohoku Univ., Sendai 980-8577, JPN) ,  USAMI N. (Inst. for Materials Res., Tohoku Univ., Sendai 980-8577, JPN) ,  TOKO K. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN) ,  SUEMASU T. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 113  Issue： 5  Page： 053511-053511-4  Publication year： Feb. 07, 2013 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： silicon ,  *barium compound ,  *boron ,  *grain boundary diffusion ,  transmission electron microscope ,  MBE growth ,  annealing (heat treatment) ,  Diffusion ,  *thin film ,  *silicide ,  secondary ion mass spectrometry ,  diffusion coefficient ,  temperature dependence ,  activation energy ,  *epitaxial film ,  *barium silicide
Semi thesaurus term： *格子拡散

JST classification (2)： Thin films of other inorganic compounds  (BK14060A) ,  Diffusion in solids in general  (BL06021L)

Terms in the title (6)： Si ,  エピタキシャル膜 ,  ホウ素 ,  原子 ,  格子拡散 ,  粒界拡散