Art

J-GLOBAL ID：201302240855978429   Reference number：13A1774139

Electric-field control of metal-insulator transition in (Nd,Sm)NiO₃ films using high-k gate dielectrics

高kゲート誘電体を用いた(Nd,Sm)NiO₃薄膜における金属-絶縁体転移の電場制御

Author (13)： ASANUMA S. (National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  ASANUMA S. (JST-CREST, Kawaguchi, JPN) ,  SHIMA H. (National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  SHIMA H. (JST-CREST, Kawaguchi, JPN) ,  YAMADA H. (National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  INOUE I. H. (National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  INOUE I. H. (JST-CREST, Kawaguchi, JPN) ,  AKOH H. (National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  AKOH H. (JST-CREST, Kawaguchi, JPN) ,  AKINAGA H. (National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  AKINAGA H. (JST-CREST, Kawaguchi, JPN) ,  SAWA A. (National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  SAWA A. (JST-CREST, Kawaguchi, JPN)
Material： Abstract. JSAP-MRS Joint Symposia (CD-ROM)  (Abstr JSAP MRS Jt Symp (CD-ROM))
Page： ROMBUNNO.20P-M6-4  Publication year： 2013 
JST Material Number： M20130006  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： dielectrics ,  electric field effect ,  neodymium compound ,  samarium compound ,  nickel compound ,  oxide ,  thin film ,  *Mott transition ,  *FET
Semi thesaurus term： high-k dielectrics ,  oxide thin film

JST classification (2)： Metal-insulator transitions  (BM02110T) ,  Transistors  (NC03070N)

Terms in the title (6)： ゲート誘電体 ,  Nd ,  Sm ,  薄膜 ,  金属-絶縁体転移 ,  電場制御