Art

J-GLOBAL ID：201302249253693870   Reference number：13A1654955

Investigation of deep-level defects in Cu(In,Ga)Se₂ thin films by two-wavelength excitation photo-capacitance spectroscopy

二波長励起光静電容量分光法によるCu(In,Ga)Se₂薄膜の深準位欠陥の研究

Author (7)： HU Xiaobo (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, JPN) ,  GUPTA Amit (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, JPN) ,  SAKURAI Takeaki (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, JPN) ,  YAMADA Akimasa (National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JPN) ,  ISHIZUKA Shogo (National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JPN) ,  NIKI Shigeru (National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JPN) ,  AKIMOTO Katsuhiro (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 103  Issue： 16  Page： 163905-163905-4  Publication year： Oct. 14, 2013 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： electrostatic capacity ,  *indium compound ,  *gallium compound ,  *selenide (chalcogenide) ,  *copper compound ,  compound semiconductor ,  solar cell ,  *deep level ,  *defect level ,  electronic transition ,  *semiconductor thin film ,  optical transition ,  *copper gallium indium selenide
Semi thesaurus term： *CIGS ,  *深準位欠陥

JST classification (1)： Lattice defects in semiconductors  (BK12040Q)

Terms in the title (10)： 波長 ,  励起光 ,  静電容量 ,  分光法 ,  Cu ,  Ga ,  薄膜 ,  深準位 ,  欠陥 ,  研究