Art

J-GLOBAL ID：201302253227803118   Reference number：13A1283086

In situ STM observations of step structures in a trench around an InAs QD at 300°C

300°CのInAsQD周囲のトレンチにおけるステップ構造のその場STM観察

Author (6)： TOUJYOU T. (Center for Collaborative Res., Anan National Coll. of Technol., 265 Aoki Minobayashi, Anan, Tokushima 774-0017, JPN) ,  OTSU T. (Center for Collaborative Res., Anan National Coll. of Technol., 265 Aoki Minobayashi, Anan, Tokushima 774-0017, JPN) ,  WAKAMATSU D. (Center for Collaborative Res., Anan National Coll. of Technol., 265 Aoki Minobayashi, Anan, Tokushima 774-0017, JPN) ,  KURISAKA M. (Center for Collaborative Res., Anan National Coll. of Technol., 265 Aoki Minobayashi, Anan, Tokushima 774-0017, JPN) ,  KONISHI T. (Center for Collaborative Res., Anan National Coll. of Technol., 265 Aoki Minobayashi, Anan, Tokushima 774-0017, JPN) ,  TSUKAMOTO S. (Center for Collaborative Res., Anan National Coll. of Technol., 265 Aoki Minobayashi, Anan, Tokushima 774-0017, JPN)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 378  Page： 44-46  Publication year： Sep. 01, 2013 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *indium arsenide ,  compound semiconductor ,  *quantum dot ,  *trench cut(processing) ,  atomic structure ,  *surface steps ,  surface terrace ,  *scanning tunneling microscope ,  *surface structure ,  in situ observation ,  semiconductor thin film ,  substrate(plate) ,  gallium arsenide ,  MBE growth
Semi thesaurus term： STM (microscope)

JST classification (1)： Surface structure of semiconductors  (BK15030A)

Terms in the title (3)： トレンチ ,  STM ,  観察