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J-GLOBAL ID：201302253911213150   Reference number：12A1798797

Identification of defect types in moderately Si-doped GaInNAsSb layer in p-GaAs/n- GaInNAsSb/n-GaAs solar cell structure using admittance spectroscopy

アドミッタンス分光法を用いた,p-GaAs/n-GaInNAsSb/n-GaAs太陽電池構造内の適度にSiドープしたGaInNAsSb層における欠陥型の同定

Author (6)： MONIRUL ISLAM Muhammad (Res. Center for Advanced Sci. and Technol. (RCAST), The Univ. of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8904, JPN) ,  MIYASHITA Naoya (Res. Center for Advanced Sci. and Technol. (RCAST), The Univ. of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8904, JPN) ,  AHSAN Nazmul (Res. Center for Advanced Sci. and Technol. (RCAST), The Univ. of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8904, JPN) ,  SAKURAI Takeaki (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, JPN) ,  AKIMOTO Katsuhiro (Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, JPN) ,  OKADA Yoshitaka (Res. Center for Advanced Sci. and Technol. (RCAST), The Univ. of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8904, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 112  Issue： 11  Page： 114910-114910-9  Publication year： Dec. 01, 2012 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *spectroscopy ,  *solar cell ,  *lattice defect ,  *indium compound ,  *gallium compound ,  *arsenide ,  *nitride ,  *silicon ,  *doping ,  carrier ,  relaxation time ,  heavy ion nuclear reaction ,  particle production ,  hopping conduction ,  Mott transition ,  *antimonide ,  admittance ,  carrier relaxation time ,  free charge carrier ,  junction capacitance
Semi thesaurus term： *アドミタンス分光法 ,  *ヒ化窒化アンチモン化ガリウムインジウム ,  freeze-out ,  variable range hopping conduction

JST classification (3)： Solar cell  (NC03084O) ,  Lattice defects in semiconductors  (BK12040Q) ,  Electric conduction in crystalline semiconductors  (BM03043X)

Terms in the title (8)： アドミッタンス ,  分光法 ,  GaAs ,  太陽電池 ,  Si ,  ドープ ,  欠陥 ,  同定