Art

J-GLOBAL ID：201302257617875883   Reference number：13A0009137

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

InGaNを基本とする発光ダイオードにおけるV欠陥によるキャリア捕獲とその漏洩電流とエレクトロルミネセンスに及ぼす影響

Author (13)： LE L. C. (State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...) ,  ZHAO D. G. (State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...) ,  JIANG D. S. (State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...) ,  LI L. (State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...) ,  WU L. L. (State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...) ,  CHEN P. (State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...) ,  LIU Z. S. (State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...) ,  LI Z. C. (Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN) ,  FAN Y. M. (Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN) ,  ZHU J. J. (Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN) ,  WANG H. (Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN) ,  ZHANG S. M. (Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN) ,  YANG H. (State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 101  Issue： 25  Page： 252110-252110-4  Publication year： Dec. 17, 2012 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *indium compound ,  *gallium compound ,  *nitride ,  compound semiconductor ,  *light emitting diode ,  carrier capture ,  lattice defect ,  leakage current ,  *electroluminescence ,  *gallium nitride ,  heterojunction ,  threading dislocation ,  quantum well ,  recombination(connection) ,  current-voltage characteristic ,  scanning electron microscope ,  electron microscopy ,  atomic force microscope ,  microscopy
Semi thesaurus term： V欠陥 ,  *gallium indium nitride ,  non-radiative recombination

JST classification (2)： Luminescence of semiconductors  (BM08092S) ,  Light emitting devices  (NC03082G)

Terms in the title (6)： InGaN ,  発光ダイオード ,  欠陥 ,  キャリア捕獲 ,  漏洩電流 ,  エレクトロルミネセンス