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J-GLOBAL ID:201302262599966250   Reference number:13A1513793

A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53% standby leakage with multi-Vt asymmetric halo MOS and write assist circuitry

低コスト・マルチVt非対称Halo MOSによるVmin改善とスタンバイリーク低減を実現した45nm 6T-SRAM
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Material:
Volume: 113  Issue: 173(ICD2013 47-69)  Page: 53-57  Publication year: Jul. 25, 2013 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semiconductor integrated circuit 

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