Art

J-GLOBAL ID：201302275221474329   Reference number：13A1556573

Depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors on β-Ga₂O₃ (010) substrates and temperature dependence of their device characteristics

β-Ga₂O₃(010)基板上の空乏モードGa₂O₃金属酸化膜半導体電界効果トランジスタ(MOSFET)と素子特性の温度依存性

Author (8)： HIGASHIWAKI Masataka (National Inst. of Information and Communications Technol., 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, JPN) ,  SASAKI Kohei (National Inst. of Information and Communications Technol., 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, JPN) ,  KAMIMURA Takafumi (National Inst. of Information and Communications Technol., 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, JPN) ,  HOI WONG Man (National Inst. of Information and Communications Technol., 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, JPN) ,  KRISHNAMURTHY Daivasigamani (National Inst. of Information and Communications Technol., 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, JPN) ,  KURAMATA Akito (Tamura Corp., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, JPN) ,  MASUI Takekazu (Koha Co., Ltd., 2-6-8 Kouyama, Nerima, Tokyo 176-0022, JPN) ,  YAMAKOSHI Shigenobu (Tamura Corp., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 103  Issue： 12  Page： 123511-123511-4  Publication year： Sep. 16, 2013 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,  *characteristic ,  temperature dependence ,  *gallium oxide ,  device structure ,  current-voltage characteristic ,  semiconductor thin film ,  semiconductor material ,  characterization ,  electric current ,  voltage ,  current density
Semi thesaurus term： gate voltage ,  drain current ,  *semiconductor device characteristic

JST classification (1)： Transistors  (NC03070N)

Terms in the title (8)： β-Ga2O3 ,  空乏モード ,  Ga2O3 ,  金属酸化膜半導体 ,  電界効果トランジスタ ,  MOSFET ,  素子特性 ,  温度依存性