Art

J-GLOBAL ID：201302282432677788   Reference number：13A1795995

Low-Current Domain Wall Motion MRAM with Perpendicularly Magnetized CoFeB/MgO Magnetic Tunnel Junction and Underlying Hard Magnets

垂直磁化CoFeB/MgO磁気トンネル接合と下層硬磁石による低電流磁壁運動MRAM

Author (17)： SUZUKI T. (Renesas Electronics Corp., Kanagawa, JPN) ,  TANIGAWA H. (Renesas Electronics Corp., Kanagawa, JPN) ,  KOBAYASHI Y. (Renesas Electronics Corp., Kanagawa, JPN) ,  MORI K. (Renesas Electronics Corp., Kanagawa, JPN) ,  ITO Y. (Renesas Electronics Corp., Kanagawa, JPN) ,  OZAKI Y. (Renesas Electronics Corp., Kanagawa, JPN) ,  SUEMITSU K. (Renesas Electronics Corp., Kanagawa, JPN) ,  KITAMURA T. (Renesas Electronics Corp., Kanagawa, JPN) ,  NAGAHARA K. (Renesas Electronics Corp., Kanagawa, JPN) ,  KARIYADA E. (Renesas Electronics Corp., Kanagawa, JPN) ,  OHSHIMA N. (Renesas Electronics Corp., Kanagawa, JPN) ,  FUKAMI S. (Tohoku Univ., Miyagi, JPN) ,  YAMANOUCHI M. (Tohoku Univ., Miyagi, JPN) ,  IKEDA S. (Tohoku Univ., Miyagi, JPN) ,  HAYASHI M. (National Inst. Materials Sci., Ibaraki, JPN) ,  SAKAO M. (Renesas Electronics Corp., Kanagawa, JPN) ,  OHNO H. (Tohoku Univ., Miyagi, JPN)
Material： Digest of Technical Papers. Symposium on VLSI Technology  (Symposium on VLSI Technology)
Volume： 2013  Page： 113-114  Publication year： 2013 
JST Material Number： A0035B  ISSN： 0743-1562  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *hard magnetic material ,  *magnetic domain wall ,  *perpendicular magnetization ,  *tunnel junction ,  magnetoresistance effect ,  lower layer ,  cobalt compound ,  iron compound ,  boron compound ,  *magnetoresistive random access memory ,  magnetization characteristic ,  nonvolatile memory
Semi thesaurus term： magnetic domain wall motion ,  magnetic tunnel junction ,  free layer

JST classification (1)： Memory units  (JC04060F)

Terms in the title (7)： 垂直磁化 ,  MgO ,  磁気トンネル接合 ,  下層 ,  磁石 ,  磁壁運動 ,  MRAM