Art

J-GLOBAL ID：201402204369182516   Reference number：14A0879809

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

半導体-絶縁体境界の電荷キャリア輸送に対する界面トラップサイトの非接触,非破壊,定量的プロービング

Author (6)： CHOI Wookjin (Dep. of Applied Chemistry, Graduate School of Engineering, Osaka Univ., Suita 565-0871, JPN) ,  MIYAKAI Tomoyo (Dep. of Applied Chemistry, Graduate School of Engineering, Osaka Univ., Suita 565-0871, JPN) ,  SAKURAI Tsuneaki (Dep. of Applied Chemistry, Graduate School of Engineering, Osaka Univ., Suita 565-0871, JPN) ,  SAEKI Akinori (Dep. of Applied Chemistry, Graduate School of Engineering, Osaka Univ., Suita 565-0871, JPN) ,  YOKOYAMA Masaaki (Kaneka Fundamental Technol. Res. Alliance Laboratories, Graduate School of Engineering, Osaka Univ., Suita 565-0871, JPN) ,  SEKI Shu (Dep. of Applied Chemistry, Graduate School of Engineering, Osaka Univ., Suita 565-0871, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 105  Issue： 3  Page： 033302-033302-4  Publication year： Jul. 21, 2014 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *trapping center ,  dielectric loss ,  FET ,  boundary ,  Polymethyl Methacrylate ,  *carrier mobility ,  electrical conductivity ,  microwave ,  carrier ,  polyacene ,  semiconductor-insulator boundary ,  hole mobility ,  charge carrier
Semi thesaurus term： *organic FET ,  PMMA

JST classification (1)： Transistors  (NC03070N)

Substance index (1)： Pentacene

Terms in the title (6)： 半導体-絶縁体境界 ,  電荷 ,  キャリア輸送 ,  界面トラップ ,  非接触 ,  定量