Art

J-GLOBAL ID：201402250423433726   Reference number：14A0762777

Fabrication of a porous alumina mask on the large surface area of a semi-insulating semiconductor substrate

半絶縁性半導体基板の大表面積上の多孔質アルミナマスクの製造

Author (6)： TAKIZAWA Chieko (Nano Characterization Unit, National Inst. for Materials Sci.) ,  KATO Seiichi (Quantum Beam Unit, National Inst. for Materials Sci.) ,  GOTO Atsushi (Nano Characterization Unit, National Inst. for Materials Sci.) ,  KITAZAWA Hideaki (Quantum Beam Unit, National Inst. for Materials Sci.) ,  IKEDA Naoki (Nanotechnology Innovation Station, National Inst. for Materials Sci.) ,  SUGIMOTO Yoshimasa (Nanotechnology Innovation Station, National Inst. for Materials Sci.)
Material： Journal of the Ceramic Society of Japan (Web)  (J Ceram Soc Jpn (Web))
Volume： 121  Issue： 1414  Page： 516-519 (J-STAGE)  Publication year： 2013 
JST Material Number： U0409A  ISSN： 1348-6535  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *Aluminum Oxide ,  *mask ,  substrate (plate) ,  dry etching ,  *anodic oxidation ,  porous medium ,  ceramic membrane

JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Reference (8)：

• 1) C. Rossi, K. Zhang, D. Estève, P. Alphonse, P. Tailhades and C. Vahlas, J. Microelectromech. Syst., 16, 919–931 (2007).
• 2) P. Menna, G. Di Francia and V. La Ferrara, Sol. Energy Mater. Sol. Cells., 37, 13–24 (1995).
• 3) V. Kochergin and H. Foll, “Porous Semiconductors: Optical Properties and Applications”, Engineering Materials and Processes Series, Springer-Verlag, London (2009).
• 4) H. Masuda and M. Satoh, Jpn. J. Appl. Phys., 35, L126–L129 (1996).
• 5) H. Masuda and K. Fukuda, Science, 268, 1466–1468 (1995).

Terms in the title (5)： 半絶縁性 ,  半導体基板 ,  表面積 ,  多孔質アルミナ ,  マスク