Art
J-GLOBAL ID:201402264205921302   Reference number:14A1451316

InGaSb結晶成長に対する重力効果-国際宇宙ステーション内の微小重力下と1G下実験-

Author (14):
Material:
Volume: 44th  Page: ROMBUNNO.08AB07  Publication year: Nov. 06, 2014 
JST Material Number: L6730B  ISSN: 2188-7268  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (1):
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors 

Return to Previous Page