Art

J-GLOBAL ID：201402289726986640   Reference number：14A0552267

How Can We Monitor the Recovery of a Damaged Crystal by the Post Annealing?

如何にしてポストアニールによって損傷結晶の回復を監視することができるか?

Author (6)： NAKAGAWA Sachiko T. (Graduate School of Sci., Okayama Univ. of Sci.) ,  MURAKAMI Tomoaki (Graduate School of Sci., Okayama Univ. of Sci.) ,  NOMURA Masakatsu (Graduate School of Sci., Okayama Univ. of Sci.) ,  KANDA Hisao (National Inst. for Materials Sci.) ,  SUKEDAI Eiichi (Graduate School of Sci., Okayama Univ. of Sci.) ,  WHITLOW Harry J. (Inst. des Microtechnologies Appliquees Arc, Haute-Ecole Arc Ingenierie)
Material： 電気学会論文誌 C  (IEEJ Transactions on Electronics, Information and Systems)
Volume： 134  Issue： 4  Page： 479-483 (J-STAGE)  Publication year： 2014 
JST Material Number： S0810A  ISSN： 0385-4221  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： annealing (heat treatment) ,  *crystal ,  *semiconductor device ,  *dopant ,  crystal lattice ,  molecular dynamics ,  *Computer Simulation ,  simulation ,  *Molecular Dynamics Simulation ,  *computer application ,  *utilization
Semi thesaurus term： *post annealing ,  *post-annealing ,  *semiconductor device

JST classification (1)： Structure determination and diffraction crystallography in general  (BK01010X)

Reference (23)：

• (1) http://www.mext.go.jp/english/topics/1307728.htm
• (2) A. Frangi, C. Cercignani, S. Mukherjee: N. Aluru (Eds.) : “Advances in Multiphysics Simulation and Experimental Testing of MEMS”, Imperial College Press, London (2008)
• (3) http://www.itrs.net/links/2011ITRS/Home2011.htm
• (4) http://geant4.cern.ch/
• (5) S. T. Nakagawa : “Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization”, Chapter 3, Academic Press, Boston (1997)

Terms in the title (4)： ポストアニール ,  損傷 ,  結晶 ,  回復