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J-GLOBAL ID:201402296209873255   Reference number:14A1213558

An Application of a Physics-based IGBT Model to a Protection Circuit for Short-Circuit Conditions

IGBT物理モデルの負荷短絡保護回路への適用
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Volume: 134  Issue: 10  Page: 853-862 (J-STAGE)  Publication year: 2014 
JST Material Number: X0451A  ISSN: 0913-6339  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Reference (26):
  • (1) Ph. Leturcq, O. Berraies, J.-L. Debrie, P. Gillet, M. A. Kallala, and J.-L. Massol: “Bipolar Semiconductor Device Models for Computer-Aided Design in Power Electronics”, 6th European Conference on Power Electronics and Applications, Vol. 1, pp. 222-227 (1995)
  • (2) Ph. Leturcq, J.-L. Debrie, and O. Berraies: “A Distributed Model of IGBTs for Circuit Simulation”, 7th European Conference on Power Electronics and Applications, Vol. 1, pp. 494-501 (1997)
  • (3) L. Lu, S. G. Pytel, E. Santi, A. T. Bryant, J. L. Hudgins, and P. R. Palmer: “Physical Modeling of Forward Conduction in IGBTs and Diodes”, IEEE IAS Annual Meeting, Vol. 4, pp. 2635-2642 (2005)
  • (4) P. R. Palmer, E. Santi, J. L. Hudgins, X. Kang, J. C. Joyce, and P. Y. Eng : “Circuit Simulator Models for the Diode and IGBT With Full Temperature Dependent Features”, IEEE Trans. Power Electron., Vol. 18, No. 5, pp. 1220-1229 (2003)
  • (5) S. Tominaga, H. Urushibata, H. Fujita, H. Akagi, T. Horiguchi, S. Kinouchi, and T. Oi: “Modeling of IGBTs With Focus on Voltage Dependency of Terminal Capacitances”, 14th European Conference on Power Electronics and Applications, pp. 1-9 (2011)
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