Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates
(IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai 2017)
Education (1)：
2006 - 2009 Kyoto University Graduate School, Division of Engineering
Professional career (1)：
博士(工学) (京都大学)
Work history (5)：
2018/10/01 - 現在 Nagoya University Graduate School of Engineering Electronics 2 Associate professor
2018/10/01 - 2038/03/31 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section
2015/05/01 - 2018/09/30 京都大学大学院 工学研究科電子工学専攻 特定助教
2009/04/01 - 2015/04/30 Nara Institute of Science and Technology Graduate School of Materials Science
