Rchr
J-GLOBAL ID:201501096608852967
Update date: Sep. 19, 2024
Shinada Takahiro
シナダ タカヒロ | Shinada Takahiro
Affiliation and department:
Job title:
Professor
Homepage URL (2):
http://www.cies.tohoku.ac.jp/
,
http://www.cies.tohoku.ac.jp/english/
Research field (4):
Nano/micro-systems
, Nanobioscience
, Electric/electronic material engineering
, Nanomaterials
Research keywords (3):
Single dopant device
, Deterministic Doping
, Single Atom Nanoelectronics
Research theme for competitive and other funds (16):
- 2018 - 2023 Development of single dopant circuit by deterministic doping and application to stochastic processing
- 2016 - 2019 Development of single dopant circuit by deterministic doping and application to stochastic processing
- 2013 - 2017 Control of quantum material properties by deterministic doping method
- 2012 - 2014 Functional modification of live cells by focused ion beam doping
- 2007 - 2008 単一不純物原子が制御されたナノデバイス製造技術の開発
- 2006 - 2008 不純物原子の規則配列を有する半導体デバイスの開発
- 2005 - 2008 Development of new high-speed electronic devices using 1D quantum structures
- 2005 - 2007 Novel semiconductors with controlled both single-atom number and position
- 2004 - 2005 イオン注入法を利用したナノ構造スピンデバイスに関する研究
- 2002 - 2002 One-by-oneドーピング法による特性ゆらぎのない極微半導体デバイスの実現
- 2000 - 2002 Study on suppression of fluctuation in semiconductor electrical characteristics by single ion inplantaticn
- 1999 - 2001 High-tenperature SIM observation under ion irradiation in order to modify surfaces in namscale
- Functional modification of cells by single-ion implantation
- Control of semiconductor device performance by single-ion implantation
- 単一イオン注入法による細胞機能修飾
- 単一イオン注入法による半導体ナノ物性制御
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Papers (29):
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Yuki Ueda, Yuto Miyake, Akirabha Chanuntranont, Kazuki Otani, Masato Tsugawa, Daiki Saito, Shuntaro Usui, Tokuyuki Teraji, Shinobu Onoda, Takahiro Shinada, et al. Detecting nuclear spins in an organosilane monolayer using nitrogen-vacancy centers for analysis of precursor self-assembly on diamond surface. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SG
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Takafumi Fujimoto, Keinan Gi, Stefano Bigoni, Michele Celebrano, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Enrico Prati, Takashi Tanii. Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature. 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. 2020. 123-124
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Enrico Prati, Takahiro Shinada, Takashi Tanii. Single Ion implanted silicon devices towards few photons emission regime for space quantum communications. Optics InfoBase Conference Papers. 2020
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Enrico Prati, Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Keinan Gi, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, et al. Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. 2019 Silicon Nanoelectronics Workshop, SNW 2019. 2019
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Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takahiro Shinada, Takashi Tanii, Enrico Prati. Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength. Nanomaterials. 2019. 9. 3. 416-416
more...
MISC (45):
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Tanii Takashi, Shinada Takahiro, Teraji Tokuyuki, Onoda Shinobu, Ohshima Takeshi, McGuinness Liam, Jelezko Fedor, Liu Yan, Wu E, Kada Wataru, et al. Fabrication of single impurity defects in a regular array by ion implantation and its quantum application. JSAP Annual Meetings Extended Abstracts. 2019. 66th. 220-220
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Kagami Risa, Higashimata Itaru, Okada Takuma, Teraji Tokuyuki, Onoda Shinobu, Haruyama Moriyoshi, Ohshima Takeshi, Shinada Takahiro, Kada Wataru, Hanaizumi Osamu, et al. Fabrication of SiV centers by ion implantation and the dependence of creation yield on the implantation energy. JSAP Annual Meetings Extended Abstracts. 2016. 77th. 1253-1253
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Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari. Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping. APPLIED PHYSICS EXPRESS. 2011. 4. 4. 046501
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Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari. Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping. APPLIED PHYSICS EXPRESS. 2011. 4. 4. 046501
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Takahiro Shinada, Takayuki Akimoto, Yanwei Zhu, Hisa Goke, Iwao Ohdomari. Modulation of Viability of Live Cells by Focused Ion-Beam Exposure. BIOTECHNOLOGY AND BIOENGINEERING. 2011. 108. 1. 222-225
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Books (2):
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Single Atom Nanoelectronics
Pan Stanford Publishing 2012 ISBN:9789814316316
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テクノカレント:半導体テクノロジーのトレンド-微細化から等価的微細化と多様化へ
世界経済情報サービス 2008
Lectures and oral presentations (26):
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Single ion implantation of Ge donor impurity in silicon transistors
(2015 Silicon Nanoelectronics Workshop 2015)
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Atomic Scale Devices: Advancements and Directions
(2014 International Electron Devices Meeting (IEDM) 2014)
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Methodology of single atom control for quantum processing in silicon and diamond
(16th Takayanagi Kenjiro Memorial Symposium 2014)
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Opportunity of Single Atom Control for Quantum Processing in Silicon
(2014 Silicon Nanoelectronics Workshop 2014)
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Comparison of Self-Heating Effect (SHE) in Short-Channel Bulk and Ultra-Thin BOX SOI MOSFETs: Impacts of Doped Well, Ambient Temperature, and SOI/BOX Thicknesses on SHE
(2013 International Electron Devices Meeting (IEDM) 2013)
more...
Works (6):
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シングルイオン注入を用いたトランジスタ特性制御の研究
2010 -
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Control of transistor performances by single-ion implantation
2010 -
-
シングルドーパントデバイスの研究 (NTT)
2009 -
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Single-dopant devices (NTT)
2009 -
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ドーパント規則配列を有する半導体のデバイス特性評価 (Semiconductor Research Corporation)
2008 -
more...
Education (4):
- - 2000 Waseda University Graduate School of Science and Engineering Department of Electronics, Information and Communication
- - 2000 Waseda University
- - 1995 Waseda University School of Science and Engineering Department of Electronics and Communications
- - 1995 Waseda University School of Science and Engineering
Professional career (2):
- 経営学 (Waseda University)
- 工学 (Waseda University)
Work history (10):
- 2014/10 - 現在 Tohoku University Center for Innovative Integrated Electronic Systems Deputy Director, Professor
- 2012/04 - 2014/09 National Institute of Advanced Industrial Science and Technology
- 2009/04 - 2012/03 Waseda University Institue for Advanced Study
- 2007/04 - 2009/03 Waseda University
- 2006/04 - 2007/03 Waseda University
- 2004/07 - 2006/03 Waseda University
- 2004/04 - 2004/06 Waseda University
- 2002/04 - 2004/03 日本学術振興会 特別研究員
- 2000/04 - 2002/03 Waseda University School of Science and Engineering
- 2001/07 - 2001/09 ドイツ ルール大学 固体物理研究所 客員研究員
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Committee career (15):
- 2009 - 2010 Fellow, Center for Research and Development Strategy (CRDS), Japan Science and Technology (JST)
- 2010 - 応用物理学会シリコンテクノロジー分科会接合技術研究会 幹事
- 2010 - Program Committee Member, 2010 International Conference on Ion Beam Modification of Materials (IBMM2010)
- 2010 - Member, Working Group 12 (Emerging Research Devices: ERD)
- 2010 - イオンビーム材料改質国際会議(IBMM2010)・プログラム委員
- 2010 - 電子情報技術産業協会(JEITA)ナノエレクトロニクス標準化専門委員会 委員
- 2010 - Member, IEC TC113, Japan Electronics and Information Technology Industries Association (JEITA)
- 2010 - 電子情報技術産業協会(JEITA) 半導体技術ロードマップ委員会(STRJ)
- 2009 - 国際固体素子材料コンファレンス(SSDM2009)・実行委員
- 2009 - 科学技術振興機構(JST)研究開発戦略センター 特任フェロー
- 2009 - Steering Committee Member, 2009 International Conference on Solid State Devices and Materials (SSDM2009)
- ワーキンググループ12 (Emerging Research Devices: ERD) 幹事
- Japan Electronics and Information Technology Industries Association (JEITA)
- Member, Working Group 13 (Emerging Research Materials: ERM)
- ワーキンググループ13 (Emerging Research Devices: ERM) 特別委員
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Awards (3):
- 2002/09/24 - 応用物理学会 応用物理学会講演奨励賞
- 2000/09/22 - 13th International Conference on Ion Implantation Technology Best Poster Award
- 1998/06/26 - International Conference on Ion Implantation Technology Student Award
Association Membership(s) (3):
The Institute of Electrical and Electronics Engineers (IEEE) Electron Devices Society
, 応用物理学会シリコンテクノロジー分科会
, 応用物理学会
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