Art
J-GLOBAL ID:201502202819882535   Reference number:15A1365963

通電熱処理によるp型窒化ガリウムのアクセプター活性化とコンタクト特性改善

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Material:
Issue: 97  Page: 98-99  Publication year: Aug. 03, 2015 
JST Material Number: F0641A  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semi thesaurus term:
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

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Lattice defects in semiconductors 

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