Art
J-GLOBAL ID:201502216478458161   Reference number:15A0827736

Theoritical Investigation on Laser Diode-Pumped High Efficiency Ytterbium Doped Yttrium Aluminium Garnet Laser

LD励起Yb:YAGレーザーにおける高効率動作の理論的解析
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Material:
Volume: 115  Issue: 46(LQE2015 1-19)  Page: 33-36  Publication year: May. 14, 2015 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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Semiconductor lasers 

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