Preparation condition and recombination rates at radiative defects in a-Si:H

OGIHARA Chisato; SHINTOKU Yuta; YAMAGUCHI Kei; MORIGAKI Kazuo

Art

J-GLOBAL ID：201502220039479485 Reference number：15A0213118

Preparation condition and recombination rates at radiative defects in a-Si:H

a-Si:Hの放射欠陥における調製条件と再結合率

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Material：
Volume： 92 Issue： 7/8 Page： 561-564 Publication year： Jul. 2014
JST Material Number： B0229A ISSN： 0008-4204 CODEN： CJPHAD Document type： Article
Country of issue： Canada (CAN) Language： ENGLISH (EN)

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